Thermal behavior of MOCVD-grown Cu-clusters on ZnO (10ī0)

  • chair:

    Kroll, M. / Löber, T. / Schott, V. / Wöll, C. / Köhler, U. (2012)
  • place:

    PhysChemChemPhys. 14 (2012), 1654-1659
  • Date: 2011

  • Kroll, M. / Löber, T. / Schott, V. / Wöll, C. / Köhler, U. (2012): „Thermal behavior of MOCVD-grown Cu-clusters on ZnO (10ī0)“. In: PhysChemChemPhys. 14 (2012), 1654-1659

Abstract

Scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS, AES) were used to study MOCVD of Cu-clusters on the mixed terminated ZnO(10[1 with combining macron]0) surface in comparison to MBE Cu-deposition.

Both deposition methods result in the same Cu cluster morphology. After annealing to 670 K the amount of Cu visible above the oxide surface is found to decrease substantially, indicating a substantial diffusion of Cu atoms inside the ZnO-bulk. The spectroscopic data do not show any evidence for changes in the Cu oxidation state during thermal treatment up to 770 K.

 

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