Deposition of palladium from cyclopentadienyl-allyl-palladium precursor on differently pretreated Si-based substrates: The role of surface Si-OH and Si-H species studied by x-ray photoelectron spectroscopy

  • chair: Wu, Q. -H. / Gunia, M. / Strunskus, T. / Witte, G. / Muhler, M. / Wöll, Ch. (2005)

  • place:

    Chemical Vapor Deposition 11 (2005), 355-361
  • Date: 2005

  • Wu, Q. -H. / Gunia, M. / Strunskus, T. / Witte, G. / Muhler, M. / Wöll, Ch. (2005): „Deposition of palladium from cyclopentadienyl-allyl-palladium precursor on differently pretreated Si-based substrates: The role of surface Si-OH and Si-H species studied by x-ray photoelectron spectroscopy“. In: Chemical Vapor Deposition 11 (2005), 355-361

Abstract

The decomposition reactions of a metal-organic precursor for the CVD of Pd, (Cp)Pd(allyl), on Si Substrates with various terminated surfaces have been studied using X-ray photoelectron spectroscopy (XPS). The XPS data show that mixed hydrogen/hydroxyl-terminated Si surfaces exhibit the highest activity ascribed to acidic Si-OH groups for precursor decomposition, followed by the as-received Si-surface.

Clean, well-defined SiO2 surfaces prepared in ultrahigh vacuum (UHV) exhibit exhibit the lowest activity for the Pd precursor decomposition, whereas the hydrogen-terminated Si surface was rather active. Scanning electron microscopy (SEM) images show that Pd clusters were on the mixed hydrogen/hydroxyl-terminated Si surface with a coverage of about 10 %.

The average size of the Pd clusters is about 30 nm. Based on the XPS experimental data, a hydrogen-assisted decomposition mechanism of the Pd precursor is proposed.

 

 

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